Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method
Date Issued
2023
Author(s)
Ткач, В. А.
Хижун, О. Ю.
Abstract
Quaternary chalcogenide semiconductors with general chemical composition I 2 –II–IV–
Q 4 (I – Cu, Ag; II–Zn, Cd, Hg; IV–Si, Ge, Sn; Q–S, Se, Te) became a point of great interest of
many material scientists due to their great combination of physical and chemical properties.
Band gap width, p-type conductivity, thermoelectrical and optical properties make these
compounds as promising materials for solar energy conversion applications or nonlinear optic
devices.
Q 4 (I – Cu, Ag; II–Zn, Cd, Hg; IV–Si, Ge, Sn; Q–S, Se, Te) became a point of great interest of
many material scientists due to their great combination of physical and chemical properties.
Band gap width, p-type conductivity, thermoelectrical and optical properties make these
compounds as promising materials for solar energy conversion applications or nonlinear optic
devices.
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