Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS  Method

dc.contributor.author	Ткач, В. А.
dc.contributor.author	Хижун, О. Ю.
dc.date.accessioned	2023-06-29T11:33:40Z
dc.date.available	2023-06-29T11:33:40Z
dc.date.issued	2023
dc.identifier.citation	Ткач В. А. Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method / Ткач В. А., Хижун О. Ю. // «Наукова весна» 2023 : матеріали 13-ої Всеукраїнської наук.-техн. конф. студ., аспірантів та молодих вчених, Дніпро, 1-3 березня 2023 року– Дніпро : НТУ «ДП», 2023. – С. 400-401	uk_UA
dc.identifier.uri	http://ir.nmu.org.ua/handle/123456789/163857
dc.description.abstract	Quaternary chalcogenide semiconductors with general chemical composition I 2 –II–IV– Q 4 (I – Cu, Ag; II–Zn, Cd, Hg; IV–Si, Ge, Sn; Q–S, Se, Te) became a point of great interest of many material scientists due to their great combination of physical and chemical properties. Band gap width, p-type conductivity, thermoelectrical and optical properties make these compounds as promising materials for solar energy conversion applications or nonlinear optic devices.	uk_UA
dc.language.iso	uk	uk_UA
dc.publisher	НТУ ДП	uk_UA
dc.title	Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method	uk_UA
dc.type	Article	uk_UA
dc.identifier.udk	538.915	uk_UA