Publication: Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method
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Ткач, В. А.
Хижун, О. Ю.
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НТУ ДП
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Abstract
Quaternary chalcogenide semiconductors with general chemical composition I 2 –II–IV–
Q 4 (I – Cu, Ag; II–Zn, Cd, Hg; IV–Si, Ge, Sn; Q–S, Se, Te) became a point of great interest of
many material scientists due to their great combination of physical and chemical properties.
Band gap width, p-type conductivity, thermoelectrical and optical properties make these
compounds as promising materials for solar energy conversion applications or nonlinear optic
devices.
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Ткач В. А. Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method / Ткач В. А., Хижун О. Ю. // «Наукова весна» 2023 : матеріали 13-ої Всеукраїнської наук.-техн. конф. студ., аспірантів та молодих вчених, Дніпро, 1-3 березня 2023 року– Дніпро : НТУ «ДП», 2023. – С. 400-401