Publication: Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.department | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtual.orcid | #PLACEHOLDER_PARENT_METADATA_VALUE# | |
| cris.virtualsource.department | 89103553-e35b-4f5b-8e4e-d1fb7dbcb357 | |
| cris.virtualsource.department | 8fa826b8-df2e-48e4-aabe-225a7537788b | |
| cris.virtualsource.orcid | 89103553-e35b-4f5b-8e4e-d1fb7dbcb357 | |
| cris.virtualsource.orcid | 8fa826b8-df2e-48e4-aabe-225a7537788b | |
| dc.contributor.author | Ткач, В. А. | |
| dc.contributor.author | Хижун, О. Ю. | |
| dc.date.accessioned | 2023-06-29T11:33:40Z | |
| dc.date.available | 2023-06-29T11:33:40Z | |
| dc.date.issued | 2023 | |
| dc.description.abstract | Quaternary chalcogenide semiconductors with general chemical composition I 2 –II–IV– Q 4 (I – Cu, Ag; II–Zn, Cd, Hg; IV–Si, Ge, Sn; Q–S, Se, Te) became a point of great interest of many material scientists due to their great combination of physical and chemical properties. Band gap width, p-type conductivity, thermoelectrical and optical properties make these compounds as promising materials for solar energy conversion applications or nonlinear optic devices. | uk_UA |
| dc.identifier.citation | Ткач В. А. Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method / Ткач В. А., Хижун О. Ю. // «Наукова весна» 2023 : матеріали 13-ої Всеукраїнської наук.-техн. конф. студ., аспірантів та молодих вчених, Дніпро, 1-3 березня 2023 року– Дніпро : НТУ «ДП», 2023. – С. 400-401 | uk_UA |
| dc.identifier.udk | 538.915 | uk_UA |
| dc.identifier.uri | http://ir.nmu.org.ua/handle/123456789/163857 | |
| dc.language.iso | uk | uk_UA |
| dc.publisher | НТУ ДП | uk_UA |
| dc.title | Electronic structure of Tl 2 CdSnSe 4 compound studied by XPS Method | uk_UA |
| dc.type | Article | uk_UA |
| dspace.entity.type | Publication |